This evaluation kit consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage.
It allows users to easily evaluate the GaN E-HEMT performance in any half-bridge-based topology, either with the universal motherboard (P/N: GS665MB-EVB) or the users’ own system design. The RTKA226110DE0040BU board provides a -3V turn-off voltage solution which is normally used in high-power and high-reliability applications. The negative drive voltage is useful to ensure the GaN FETs remain at turn-off status when desired, to stay away from the impact of any possible ground noise and disturbance from the system and environment. For lower power applications, please refer to RTKA226110DE0010BU with 0V turn-off voltage.
