Fast-switching gallium nitride (GaN) and silicon carbide (SiC) power components enable power-system designers to reduce the size of the magnetics in ac-dc and dc-dc converters, and to realize designs which achieve high power density.
But in a 3.5 kW dc-dc converter how best to take advantage of the faster switching characteristics, superior robustness and excellent avalanche capability of onsemi SiC MOSFETs?
Now Future Electronics offers a convenient and quick way to find out, with the launch of the SoniC power system development board.
An adaptable platform for the development of a 3.5 kW dc-dc converter, the SoniC board features a modular plug-in card which enables the designer to evaluate the performance of SiC MOSFETs with different Rds(on) values, from onsemi.
SoniC is backed by full technical documentation and support from Future Electronics’ dedicated power electronics specialists.
