With breakdown voltage now extended up to 1,700 V for SiC MOSFETs, and avalanche-rated Schottky diodes, the EliteSiC family of components from onsemi supports high-voltage industrial and EV applications, in addition to energy infrastructure.
The EliteSiC families offer higher efficiency and improved power density which translate into more efficient and compact power converters. Reliable supply of SiC devices is ensured by vertically integrated SiC manufacturing.
EliteSiC components such as power modules, MOSFETs and diodes are application optimized to meet the highest demands of different power-hungry applications.
The three generations of EliteSiC MOSFETs: M1, M2, M3 show progression in technology and manufacturing. Each generation has improved upon substrate layout thus improving unit cell density and reducing parasitics. The net effect is continuous reduction in the specific on-resistance (RSP).
The newest M3 technology has been split into two application−specific products: M3S and M3T. The M3T is designed to meet motor control and traction inverter requirements while M3S provides an ultra−low RSP along with best in class switching losses (ETOT). This makes M3S well suited for high−speed applications such as on−board chargers (OBCs) and high voltage DC/DC converters.
For industrial, energy storage and EV charging, EliteSiC not only boosts performance, but also can reduce system size, weight and improve cooling. On board chargers can benefit from balance between conduction and switching losses, making EliteSiC ideal for Power Factor Correction (PFC) and DC/DC switching applications like LLC, CLLC and Phase Shifted Full Bridge.
Design flexibility is increased with the range of packages, which include TO-247-4L with Kelvin source utilizing full benefits of SiC. Additionally, TO-247 3L, D2-PAK-7L and the top-cooled surface-mount BPAK.
For fast switching at high voltage and high temperature, the EliteSiC Schottky diodes maintain high efficiency and also feature zero reverse-recovery charge, low forward voltage and temperature-independent current stability.
To increase thermal performance and achieve higher power density, the compact and lightweight EliteSiC modules integrate SiC FETs and diodes and are rated for voltage from 650 V up to 1200V. The modules feature transfer molded packages, in addition to packages which have gel encapsulated cases to add reliability.
The combination of the features and robust design of EliteSiC MOSFETs, power modules and Schottky diodes, reduces design risk, and enables greater control across a range of applications.