Multiple protection features and isolation from SiC MOSFET gate driver
Part of the STGAP3S family of protected single gate drivers from STMicroelectronics, the STGAP3SXS offers galvanic isolation between the driving channel and the low-voltage control and interface. The STGAP3S family includes different options with 10A and 6A current capability, each of which is available with dedicated UVLO variants for SiC MOSFETs and IGBTs.
The STGAP3SXS is rated for 10A source and sink current, and features dedicated under-voltage lockout (UVLO) for SiC MOSFETs and IGBTs. Protection against desaturation is ultra-fast and features differentiated intervention thresholds in addition to adjustable soft turn-off. The SiC MOSFET operates from -40°C to 150°C.
Optimal driving performance is supported by the Miller clamp in addition to the optional negative driving.
The reinforced galvanic isolation provides 5.7kVrms to the UL 1577 standard, peak transient over-voltage is 8kV to IEC 60747-17, and the peak repetitive isolation voltage is 1.2kV to IEC 60747-17.