High voltage and ultra-low on-resistance from silicon carbide power modules
The NXH003P120M3F2PTHG EliteSiC™ power module from onsemi combines on-resistance of 3mΩ with voltage of 1,200V. Integrated in the module is a SiC MOSFET with half-bridge topology, a thermistor and high-performance substrate (HPS) and direct bonded copper (DBC)
The HPS functions as a ceramic layer in the direct bonded copper to isolate the SiC chip from the heat-sink of the module. This enables superior thermal management in high-power applications. The F2 package has press-fit pins and measures 56.7mm x 42.5mm.
The NVVR26A120M1WSS EliteSiC power module is designed to support a traction inverter, and enables increased performance, in addition to greater efficiency, and higher power density. With ultra-low on-resistance of 2.6mΩ, and voltage of 1,200V, the module features single-side cooling, and a half-bridge topology with 90° power tabs.
For on-board chargers, the NVXK2TR40WXT is a 1,200V EliteSiC power module with dual half-bridge topology and is rated to handle 55A current. Automotive-qualified to AEC-Q101, the module features creepage and clearance to the IEC 60664−1, IEC 60950−1 standards, and module serialization for full traceability.