BM2P060MF evaluation board outputs an isolated voltage of 24V from an input of 90VAC to 264VAC and the maximum output current is 1.67A. BM2P060MF which is PWM method DC/DC converter IC built-in 650V MOSFET is used
The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage N-channel power MOSFETs or enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V.
View theĀ EVSTDRIVEG600DG driving 650 V enhancement-mode GaN switches.
The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs.
View theĀ EVSTDRIVEG600DM driving 600 V MDmesh DM2 power MOSFET with fast recovery diode.
The RTKA214401DR0000BU demonstration board provides a simple and compact platform for demonstrating theĀ RAA214401Ā 40V, 150mA low-dropout (LDO) linear regulator with super low quiescent current.
This evaluation kit consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage.
This evaluation kit consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage.
