100 V MOSFETs offer improved efficiency in synchronous rectifiers and dc-dc converters

The 100 V SiSS5108DN, SiSS5110DN, and SiSS5112DN TrenchFET¬ģ power MOSFETs from Vishay benefit from improved trench semiconductor technology to reduce switching and conduction losses.

The 5th generation of Vishay TrenchFET power MOSFETs offers a superior combination of on-resistance and gate charge to provide for more efficient switching and conduction. 

The TrenchFET technology applied in the 100 V SiSS5108DN, SiSS5110DN, and SiSS5112DN MOSFETs makes them ideal for use in synchronous rectification applications, and as the primary-side switch in dc-dc converters.

These 100 V MOSFETs are also tuned for the lowest product of on-resistance and output charge. They are housed in a PowerPAK 1212-8S package which has a footprint of 3.3 mm x 3.3 mm.

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