High-temperature MOSFET for fast switching and higher efficiency
The IMBG120R040M2H CoolSiC™ MOSFET 1200V G2, from Infineon, features low on-resistance and optimized field control, which improves switching speed and reduces losses. The thermal resistance results in advanced energy efficiency for power circuits.
In a compact package, the IMBG120R040M2H extends lifetime and reliability when used in challenging industrial applications. The lower thermal resistance means that less cooling is required, which benefits high-frequency applications.
The second generation of the Infineon CoolSiC MOSFETs comes with improved chip performance and thermal resistance, as well as best-in-class om-resistance. New with the second generation are overload operation up to 200°C virtual junction temperature (Tvj) and avalanche robustness and maximum on-resistance at high temperature.
Request the REF-DR3KIMBGSIC2MA reference design board to assess the CoolSiC MOSFET 1200 V G2 in a TO-263-7 package and EiceDRIVER™ gate drive, in an integrated servo motor and drive.