45 V MOSFET provides more efficient alternative to 60 V devices in low-voltage applications

The SiR608DP from Vishay features low on-resistance, gate charge and output capacitance, while offering higher breakdown capability than a 40 V MOSFET.

Vishay provides an advanced 45 V N-channel MOSFET that is intended for use in high-efficiency dc-dc power-conversion circuits. 

The SiR608DP is ideal as a replacement for a 40 V MOSFET in circuits that are at risk of transient voltage events for which the 40 V breakdown voltage rating provides an insufficient safety margin. 

In these conditions, the 45 V SiR608DP provides better efficiency than a 60 V MOSFET, the typical alternative to a 40 V MOSFET in power circuits. This is because of the outstanding operating characteristics of the SiR608DP: its low on-resistance is complemented by very low gate charge and output capacitance. 

The SiR608DP is supplied in a PowerPAK® SO-8 package which has a standard 6 mm x 5 mm footprint, and which contributes negligible additional resistance to the circuit. 

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