650 V MOSFET in TO-220 package gives higher power density

The STP65N150M9 is based on the STMicroelectronics MDmesh M9 superjunction MOSFET technology, giving low on-resistance as a function of die area, and enabling engineers to realize highly efficient power converter designs.

The STP65N150M9 from STMicroelectronics is a 650 V N-channel MOSFET supplied in a three-lead TO-220 package. It is rated for a maximum continuous drain current of 20 A.  

This MOSFET is based on MDmesh M9 superjunction MOSFET technology developed by STMicroelectronics: this technology is responsible for the STP65N150M9’s very low on-resistance as a function of die area. The M9 technology benefits from a multi-drain manufacturing process which produces a superior device structure. 

As well as its low on-resistance of 128 mΩ, the STP65N150M9 also features low gate charge of 32 nC, making it particularly suitable for applications that require high power density and outstanding efficiency.

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