650 V MOSFET produces efficient power-conversion performance
The SiHK045N60E power switch from Vishay combines low on-resistance with low gate charge to give low switching and conduction losses in switching power converters. The part is also notable for its low output capacitance.
![](https://www.my-boardclub.com/wp-content/uploads/2023/05/CF_Vishay_SIHK045N60E-1024x731.jpg)
The fourth generation of Vishay E series MOSFET technology provides an improved figure-of-merit, for more efficient performance in power-conversion applications.Ā
The 650 V SiHK045N60E power MOSFET takes advantage of the E series technology to produce excellent switching and conduction characteristics. The device offers a low figure-of-merit for the product of on-resistance and gate charge. On-resistance at a gate-source voltage of 10 V is 43 mā¦. Maximum gate charge is 98 nC.Ā
Energy-related effective output capacitance is another attractive feature of the SiHK045N60E, at just 117 pF.Ā