Drop-in replacement for silicon IGBTs and superjunction MOSFETs with SiC Cascode JFETs
To support standard gate drivers, the EliteSiC™ Cascode JFETs from onsemi offer high efficiency, faster frequency and higher power density in addition to reduced EMI, and a smaller system size.
The UF4SC120023K4S is a 1,200V, 23mΩ G4 SiC FET with the unique cascode circuit configuration. The cascode co-packages a normally-on SiC JFET with a silicon MOSFET to produce a normally-off SiC FET.
The TO-247-4L package supports faster switching and clean gate waveforms. The standard gate-drive enables this SiC FET to be used as a drop-in replacement for silicon IGBTs, silicon FETs, SiC MOSFETs or silicon superjunction MOSFETs.
With ultra-low gate charge and exceptional reverse recovery, the UF4SC120023K4S supports switching inductive loads or other applications with using a standard gate drive.
The range also includes three EliteSiC Cascode JFETs which are offered in a TO247-3 package and are rated for 650V. The UF3C065030K3S offers the lowest on-resistance of 27mΩ, with 42mΩ from the UF3C065040K3S and 42mΩ from the UF3C065080K3S.