Expansion of SiC MOSFET family gives designers choice of package styles
onsemi supplies a growing range of silicon carbide (SiC) MOSFETs which give power-system designers a wide choice of package, footprint and voltage-rating options.
onsemi SiC MOSFETs offer low on-resistance and low switching losses.
The expansion of the onsemi family comes in response to demand for devices based on SiC technology, which offers a combination of lower switching losses and faster switching speeds than traditional silicon power switches. These attributes have made SiC MOSFETs popular in applications which require high power-conversion efficiency, high power density or both.
onsemi, which recently announced the expansion of its SiC production facilities in Czechia and in New Hampshire, US, is supplying the industrial market with SiC MOSFETs that feature voltage ratings up to 1,700 V.
| Part Number | Voltage Rating | On-resistance | Package Style |
|---|---|---|---|
| NTH4L014N120M3P | 1,200 V | 14 mΩ | TO247-4L |
| NTH4L020N090SC1 | 900 V | 20 mΩ | TO247-4L |
| NVH4L060N065SC1 | 650 V | 44 mΩ | TO247-4L |
| NTH4L028N170M1 | 1,700 V | 28 mΩ | TO247-4L |
| NTMT045N065SC1 | 650 V | 33 mΩ | Power88 |
| NVBG025N065SC1 | 650 V | 19 mΩ | D2PAK-7L |