Isolated gate driver for SiC MOSFETs offers robust performance

The STGAP2SiCS from STMicroelectronics offers high immunity to transient voltages, and maintains stable operation when used in hard-switching topologies. Low propagation delay enables power-system designs to support high switching frequencies.

The STMicroelectronics STGAP2SiCS is a specialized single-channel gate driver for controlling silicon carbide (SiC) MOSFETs. Supplied in a space-saving, narrow-body SO-8 package, it offers robust operation and supports high-frequency switching.

Providing galvanic isolation between the gate-driving channel and the low-voltage control signal, the STGAP2SiCS operates at voltages up to 1,200 V on the high-voltage rail. Input-to-output propagation time of less than 75 ns provides for accurate operation of PWM-controlled switching. 

High common-mode transient immunity of ¬Ī100 V/ns over the entire operating-temperature range helps the power-system designer to maintain highly reliable operation.¬†

Two optional configurations are available, giving a choice of separate outputs which allow turn-on and turn-off times to be independently optimized using an external resistor, or a single output with active Miller clamp function. The single-output configuration enhances stability in high-frequency hard-switching applications, taking advantage of the Miller clamp to prevent excessive oscillation of the power switch gate voltage.

The STGAP2SiCS inputs are compatible with CMOS/TTL logic down to 3.3 V, simplifying connection to a host microcontroller or DSP. 

The driver can sink and source up to 4 A at a gate-driving voltage up to 26 V. An integrated bootstrap diode simplifies design and enhances reliability. A shut-down mode with a dedicated Input pin helps to minimize system power consumption.

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