The EVALSTGAP2SICS half-bridge board from STMicroelectronics enables evaluation of the STGAP2SICS, an isolated single-channel gate driver for silicon carbide (SiC) MOSFETs. The STGAP2SiCS produces an output drive current of up to 4 A, and offers galvanic isolation of 6 kV.
In the EVALSTGAP2SiCS board, the STGAP2SiCS drives a half-bridge power stage with a voltage rating of up to 1,200 V. The components are easy to access on the board and to modify.
The board supports negative gate driving. Onboard isolated dc-dc converters supply the high- and low-side gate drivers, with maximum isolation of 5.2 kV.
The configuration of the drive voltage can be easily selected from the following options:
- +17 V/0 V
- +17 V/-3 V
- +19 V/0 V
- +19 V/-3 V
