New dc-dc converters meet fast-switching requirements of GaN-based systems

Murata has introduced compact new 1 W dc-dc converters, the MGN1 series, which supply the voltages needed by the gate drivers of wide bandgap gallium nitride (GaN) power switches. The regulated output-voltage options are +8 V, +12 V, and +6/-3 V from a 12 V nominal input voltage.

Lightweight, and measuring 12.0 mm x 16.0 mm x 4.25 mm or 12.0 mm x 14.5 mm x 4.25 mm, these surface-mount modules can easily be integrated into space-constrained designs. 

One of the key attributes of the MGN1 series converters is the ultra-low isolation capacitance of 2.5 pF. This minimizes the coupling of transients across the isolation barrier, preventing signal distortion, and alleviating system EMI problems. 

Common-mode transient immunity of more than 200 kV/µs makes the MGN1 modules ideal for GaN-based systems that switch at high frequency. Thanks to the partial discharge performance, reliable operation is maintained in high-voltage conditions.

The dc-dc converters in Murata’s MGN1 series support a continuous isolation barrier withstand voltage of 1.1 kV.