New dc-dc converters meet fast-switching requirements of GaN-based systems

The MGN1 converter modules from Murata provide the ideal isolated power supply solution for the gate drivers required by GaN power switches. Compact dimensions ensure the modules suit tightly-packed board layouts.

Murata has introduced compact new 1 W dc-dc converters, the MGN1 series, which supply the voltages needed by the gate drivers of wide bandgap gallium nitride (GaN) power switches. The regulated output-voltage options are +8 V, +12 V, and +6/-3 V from a 12 V nominal input voltage.

Lightweight, and measuring 12.0 mm x 16.0 mm x 4.25 mm or 12.0 mm x 14.5 mm x 4.25 mm, these surface-mount modules can easily be integrated into space-constrained designs. 

One of the key attributes of the MGN1 series converters is the ultra-low isolation capacitance of 2.5 pF. This minimizes the coupling of transients across the isolation barrier, preventing signal distortion, and alleviating system EMI problems. 

Common-mode transient immunity of more than 200 kV/”s makes the MGN1 modules ideal for GaN-based systems that switch at high frequency. Thanks to the partial discharge performance, reliable operation is maintained in high-voltage conditions.

The dc-dc converters in Murata’s MGN1 series support a continuous isolation barrier withstand voltage of 1.1 kV.

Part Number Input Voltage Output Voltage Line Regulation Load Regulation Number of Outputs
MGN1D050603MC  5 V 6 V ±0.2% 1% 2
MGN1D120603MC  12 V 6 V ±0.2% 1% 2
MGN1S0508MC  5 V 8 V ±1.2% 4% 1
MGN1S0512MC  5 V 12 V ±1.2% 4% 1
MGN1S1208MC  12 V 8 V ±1.25% 4% 1
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