Power MOSFETs offer high efficiency in secondary-side converter applications
The SiR5x0DP MOSFETs from Vishay, built with the fifth generation of TrenchFET technology, offer a step-up in performance, reducing both on-resistance and gate charge for lower switching and conduction losses.
Products in the latest generation of the Vishay family of TrenchFET® power MOSFETs provide superior performance and efficiency in applications such as the secondary side of dc-dc converters in servers and telecoms infrastructure.
The 150 V SiR570DP, 100 V SiR510DP, and 80 V SiR580DP offer the industry’s best figure-of-merit for the product of on-resistance and gate charge. In the case of the SiR510DP, the figure-of-merit is as much as 78% better than typical competing products. This superior performance enables power-system designers to reduce switching and conduction losses, and so to achieve higher conversion efficiency.
The fifth-generation TrenchFET SiR5x0DP MOSFETs are ideal for use in a range of power functions, including:
- Input inrush switches
- O-ring
- Primary-side switching
- Synchronous rectification
- Hot-swap switching
- Motor-drive control