Power MOSFETs offer high efficiency in secondary-side converter applications

The SiR5x0DP MOSFETs from Vishay, built with the fifth generation of TrenchFET technology, offer a step-up in performance, reducing both on-resistance and gate charge for lower switching and conduction losses.

Products in the latest generation of the Vishay family of TrenchFET® power MOSFETs provide superior performance and efficiency in applications such as the secondary side of dc-dc converters in servers and telecoms infrastructure. 

The 150 V SiR570DP, 100 V SiR510DP, and 80 V SiR580DP offer the industry’s best figure-of-merit for the product of on-resistance and gate charge. In the case of the SiR510DP, the figure-of-merit is as much as 78% better than typical competing products. This superior performance enables power-system designers to reduce switching and conduction losses, and so to achieve higher conversion efficiency. 

The fifth-generation TrenchFET SiR5x0DP MOSFETs are ideal for use in a range of power functions, including: 

  • Input inrush switches
  • O-ring
  • Primary-side switching
  • Synchronous rectification
  • Hot-swap switching
  • Motor-drive control
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