Top-side-cooled power MOSFETs offer efficient thermal management
The exposed drain pad on top side of the TCPAK1012 package of onsemi NVBYST1D4N08X power MOSFETs allows engineers to directly transfer heat to a heat-sink to vastly improve thermal performance.
Standard MOSFETs are bottom-cooled, relying on the printed-circuit board (PCB) for heat dissipation which, in already thermally-constrained environments such as on-board chargers, necessitates vias and complex board layouts. The TCPAK1012 package of the onsemi range of NVBYST1D4N08X power MOSFETs instead exposes a drain pad at the top of the package to directly provide a surface to which an engineer can attach a heat-sink or heat-conductive channel.
Surface-mounted NVBYST1D4N08X MOSFETs measure approximately 10mm x 12mm with a low-profile height of 1.3mm to 1.4mm. Combined with a reduced thermal resistance of up to 60%, compared to a traditional TOLL package, engineers can place other components in the space previously unavailable using conventional packages. This contributes to more compact power electronic circuits.
The NVBYST1D4N08X MOSFETs benefit from the latest onsemi T10 technology, achieving a reduction in on-resistance of up to 40% compared to existing technology to reduce switching losses and improve power supply efficiency. Other benefits of T10 include:
- 50% reduction in typical gate capacitance
- Excellent body-diode softness
- 10% improvement in unclamped inductive switching (UIS) capability