The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs.
View the EVSTDRIVEG600DM driving 600 V MDmesh DM2 power MOSFET with fast recovery diode.
The RTKA214401DR0000BU demonstration board provides a simple and compact platform for demonstrating the RAA214401 40V, 150mA low-dropout (LDO) linear regulator with super low quiescent current.
This evaluation kit consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage.
This evaluation kit consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage.
The RTKA210040DR0000BU demonstration board features the RAA210040.
The RTKA214220DR0000BU demonstration board provides a simple platform for demonstrating the RAA214220 20V, 150mA, low-dropout (LDO) linear regulator.
